In re Nomiya
Court of Customs and Patent Appeals
1Opinion of the Court
RICH, Judge.
This appeal is from the decision of the Patent Office 1 Board of Appeals affirming the rejection under 35 U.S.C. § 103 of claims 1-8 and 33 in application serial No. 768,794, filed October 18, 1968, for “Semiconductor Circuit Devices Using Insulated Gate-Type Field Effect Elements Having Protective Diodes.” We reverse.
The Invention
Appellants’ invention pertains to insulated-gate-type field-effect transistors (hereinafter IGFET) and their use in *567semiconductor capacitive memory cireuits having very low capacitance. For ease of discussion we reproduce Figs. 1 and 2 of the application:
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