Abstract
A basic idea of ICTS (Isothermal Capacitance Transient Spectroscopy) for a system of continuously-distributed gap state and experimental data by the ICTS applied to P-doped a-Si:H Schottky barrier diode are presented. It is shown that the ICTS is a useful tool for the study of gap state of a-Si:H whose material parameters are strongly temperature-dependent.
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Authors
Hideyo OkushiYozo TokumaruSatoshi YamasakiHidetoshi OhedaKatsuaki Tanaka
Topics
Thin-Film Transistor TechnologiesSilicon and Solar Cell TechnologiesSemiconductor materials and interfaces
About
PublishedOct 1, 1981
TypeArticle
Citations5