Monte Carlo simulation assisted parameter optimization for focused ion beam micromachining of boron-doped diamond

Diamond’s extremely high hardness and chemical inertness make existing processing methods prone to causing damage and hinder the achievement of fine micro-machining, bringing significant challenges to the manufacturing of micro-devices like diamond sensors. To address this problem, this study combines the Monte Carlo method with Focused Ion Beam (FIB) processing technology to systematically investigate the FIB processing mechanism of diamond and optimize process parameters. The study first used SRIM simulations to analyze the sputter yield, material damage distribution, and energy loss characteristics of gallium and helium ions at different energies and incident angles. Then, it combined this with FIB experiments to verify the influence of beam current, set depth, and incident angle on the processed morphology. Furthermore, Raman spectroscopy was used to analyze the diamond damage layer. This study clarifies the core principles of diamond FIB processing, provides a key parameter basis and process guidance for the controllable manufacturing of diamond sensors and other micro-devices, and effectively promotes the development of high-precision diamond processing technology and its application expansion in the semiconductor and micro-sensing fields.