Abstract
In this work, we demonstrate for the first time a two-stage high throughput fine-pitch die-to-wafer Copper-Copper (Cu) thermal compression bonding (TCB) technique, which has a throughput of$> 300$units-per-hour (UPH), with the potential to increase the throughput to 1100 UPH. We have optimized the bonding for high throughput, high overlay accuracy and low contact resistance with a die-to-substrate bump pitch of$\leq 10\mu \mathrm{m}$extendible to$\sim 7\mu \mathrm{m}$pitch. The average shear force per$2 imes 2 ext{mm}^{2}$die after high throughput TCB is$> 110$N. The average specific contact resistance of the Cu-Cu contact is$1.24 imes 10^{-9}\Omega\cdot ext{cm}^{2}$, comparable to the lowest reported in Cu/SiO2 hybrid bonding. The simplicity of TCB compared to hybrid bonding (HB) makes it a preferred approach for heterogeneous integration for 3D stacking, interposers, and the Silicon Interconnect Fabric (Si-IF) down to ~$7 \mu\mathrm{m}$bonding pitches.
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