Patent
Mask structure for x-ray lithography (US Patent 4253029)
Bell Telephone Laboratories, Incorporated · Granted Feb 24, 1981 · Filed May 23, 1979
Patent number: 4253029 Granted: 1981-02-24 Filed: 1979-05-23 Inventors: Martin P. Lepselter (Summit, NJ, US); Hyman J. Levinstein (Berkeley Heights, NJ, US); Dan Maydan (Short Hills, NJ, US) Assignees: Bell Telephone Laboratories, Incorporated (Murray Hill, NJ, US)
Abstract
A mask substrate for use in an x-ray lithographic system comprises a boron nitride member (32, FIG. 2) coated with a polyimide layer (20) whose thickness is approximately the same as that of the boron nitride member. The substrate is mechanically strong and
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