High performance submicron metal-oxide-semiconductor field effect transistor device structure (US Patent 4384301)

Patent number: 4384301 Granted: 1983-05-17 Filed: 1981-10-09 Inventors: Al F. Tasch, Jr. (Richardson, TX, US); Pallab K. Chatterjee (Richardson, TX, US); Horng-Sen Fu (Sunnyvale, CA, US) Assignees: Texas Instruments Incorporated (Dallas, TX, US)

Abstract

A novel metal-oxide-semiconductor (MOS) field effect transistor having enhanced oxide thickness at the edge of the gate electrode and having metal silicide regions in the gate electrode and source and drain areas. The