Short channel MOSFET
International Business Machines Corporation
A field effect transistor having operating characteristics based on the control and modulation of the punch through phenomenon. The channel region between the source and the drain regions is appropriately doped such that the source and drain depletion regions overlap when no potential is applied between source and drain. The overlapped region in the absence of a gate field has a potential barrier. A gate voltage modulates the barrier to below the kT/q parameter. The source-to-drain fields also modulate the barrier.
1ClaimsFirst of 18
- 1
In a field effect transistor of the type wherein in a semiconductor body current conduction occurs in a channel region of said body between a source and a drain external electrodes and is modulated by a signal applied to a gate electrode positioned in current flow influencing proximity to said channel, the improvement comprising in combination overlapping depletion regions in said channel extending from said source electrode greater than the midpoint of the said channel toward said drain…
2Description
This application is a continuation of application Ser. No. 06/656.045 filed Sept. 28, 1984, now abandoned which in turn is a continuation of application Ser. No. 96/463,787 filed Feb. 4, 1983, now abandoned, which in turn is a continuation-in-part of application Ser. No. 06/203,037 filed Nov. 3, 1980 now abandoned.